We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated by cross-sectional …
B Ibarlucea, L Römhildt, F Zörgiebel, S Pregl… - Applied Sciences, 2018 - mdpi.com
We present a biosensor chip with integrated large area silicon nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis …
T Arjmand, M Legallais, T Haffner… - Semiconductor …, 2020 - iopscience.iop.org
Single silicon nanowire (SiNW) omega-gate field-effect transistors have been fabricated using a standard photolithography method on a Kapton flexible polyamide thin film attached …
T Arjmand, M Legallais, TTT Nguyen, P Serre… - Silica and Silicon …, 2022 - mdpi.com
This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …
The aim of the study is to perform the electrical characterization of Innovative HfO2 based Omega FinFET and compare it with SiO2 material by varying the oxide thickness ranging …
KP Rajeev, M Beliatis… - … of Nanoscience and …, 2019 - ingentaconnect.com
Fabrication techniques such as laser patterning offer excellent potential for low cost and large area device fabrication. Conductive polymers can be used to replace expensive …
Earlier in our papers, we have explained some electrical properties of nanowires based on the idea of fractal structure of nanocluster semiconductor films [4-7]. Because of non-linear …
This dissertation examines the direct printing of conductive inks on polymeric substrates for applications in organic electronics, microfluidic valving systems, and wearable sweat …