Recently, more occasions with high input voltage and/or high output voltage applications are
emerging. However, the existing switching devices are limited by the voltage stress, eg, the …

High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

This paper presents a novel compact circuit combining function of gate control and voltage
balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect …

The series connection of insulated gate bipolar transistor (IGBT)/diode devices allows the
operation at voltage levels higher than the rated voltage of one IGBT/diode. However, due to …

Insulated gate bipolar transistors (IGBTs) are usually connected in series to form high-
voltage switches in power electronics applications. However, the series operation of IGBTs …

High-voltage switches required in present power electronics applications are realized by
connecting existing devices in series. Unequal sharing of voltage across series-connected …

Limited by low availability, high price, and poor switching performance of high-voltage
power devices, connecting low-voltage devices in series to block much higher voltages is …

In this paper, a multilevel current-source inverter (MCSI) topology is analyzed. The issue of
constructing a novel modular single-rating inductor MCSI is explored, taking advantage of …

This paper presents the design and control of a megawatt scale, medium voltage, medium
frequency resonant dual active bridge dc-dc converter operating as a bus-tie converter in a …

This letter proposes a novel single passive gate driver solution based on passive devices to
control series-connected power semiconductor devices for dc circuit breaker (DCCB) …