Semipolar () InGaN/GaN micro-photodetector for gigabit-per-second visible light communication
This paper investigated the use of semipolar InGaN/GaN multiple quantum well based micro-
photodetectors (μPDs) as the optical receiver for visible light communication (VLC). The …
photodetectors (μPDs) as the optical receiver for visible light communication (VLC). The …
Comparison of Beyond 1 GHz C-Plane Freestanding and Sapphire-Substrate GaN-Based micro-LEDs for High-Speed Visible Light Communication
X Shan, G Wang, S Zhu, P Qiu, R Lin… - Journal of Lightwave …, 2022 - ieeexplore.ieee.org
With ever-growing demand for 6G networks technology, visible light communication (VLC)
as a vital component of 6G has challenging requirement for superior performance of light …
as a vital component of 6G has challenging requirement for superior performance of light …
High responsivity and wavelength selectivity of GaN‐based resonant cavity photodiodes
The implementation of blue‐light photodiodes based on InGaN in emerging technologies,
such as free‐space visible light communication (VLC), requires transformative approaches …
such as free‐space visible light communication (VLC), requires transformative approaches …
CsPb(Br/I)3 Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes
Z Ma, X Li, C Zhang, L Turyanska, S Lin… - ACS Applied Nano …, 2021 - ACS Publications
The modulation bandwidth of white light-emitting diodes (LEDs) is an important factor in a
visible-light communication (VLC) system, which is mainly limited by the down-conversion …
visible-light communication (VLC) system, which is mainly limited by the down-conversion …
Thermal effects on the electrical and optical characteristics of micro‐light‐emitting diodes with different current spreading layer
H Huang, H Wu, C Huang, Q Han… - … status solidi (a), 2019 - Wiley Online Library
GaN‐based top‐emitting micro‐blue‐light‐emitting diode chips with different current
spreading layers (CSLs) and different sizes are fabricated, analyzed at different ambient …
spreading layers (CSLs) and different sizes are fabricated, analyzed at different ambient …
Dynamic device characteristics and linewidth measurement of InGaN/GaN laser diodes
We report on the characterization and analysis of a GaN-based distributed feedback laser
diode (DFB-LD) with 3 rd-order laterally etched sidewall gratings centered at a wavelength …
diode (DFB-LD) with 3 rd-order laterally etched sidewall gratings centered at a wavelength …
[PDF][PDF] Comparison the structural, electronic and transport properties of (5, 0) zigzag GaN nanotube with BN nanotube: DFT theoretical calculation
M Kamalian - Journal of Nanoelectronic Devices, 2019 - jms.procedia.org
The structural, electronic and transport properties of zig-zag (5, 0) GaN nanotube and BN
nanotube have been studied using Density Functional Theory (DFT). Comparing GaN …
nanotube have been studied using Density Functional Theory (DFT). Comparing GaN …