Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device

T Sasaki, T Shibata - US Patent 10,916,480, 2021 - Google Patents
(57) ABSTRACT A magnetic wall utilization type analog memory device includes a
magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic …

Magnetic memory cell with asymmetrical geometry programmable by application of current in the absence of a magnetic field

G Gaudin, IM Miron, O Boulle, SC Hiyil… - US Patent …, 2019 - Google Patents
US10224085B2 - Magnetic memory cell with asymmetrical geometry programmable by
application of current in the absence of a magnetic field - Google Patents US10224085B2 …

Memory device, operation method of memory device and operation method of memory circuit

HL Chiang, CT Lin, SJ Lin, C Tzu-Chiang… - US Patent …, 2023 - Google Patents
A memory device and a memory circuit is provided. The memory device includes a spin-orbit
torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write …

Transistorless memory cell

K Chiang, C Te Lin, M Cao, YJ Mii, SC Lai - US Patent 11,990,169, 2024 - Google Patents
In some embodiments, the present disclosure relates to an integrated circuit. The integrated
circuit includes an operative memory device coupled to a bit-line. The operative memory …

Transistorless memory cell

K Chiang, C Te Lin, M Cao, YJ Mii, SC Lai - US Patent 11,094,361, 2021 - Google Patents
In some embodiments, the present disclosure relates to an integrated circuit. The integrated
circuit has an operative magnetic tunnel junction (MTJ) device configured to store a data …