The infrared domain is very attractive for many applications owing to two unique features:(i)
it contains several atmospheric transparency windows,(ii) it corresponds to the 'molecular …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Lasers continue to be an amazingly robust field of activity. Anyone seeking a photon source
is now confronted with an enormous number of possible lasers and laser wavelengths to …

A new approach in the design of (Al) InGaAsSb-GaSb quantum-well separate confinement
heterostructure (QW-SCH) diode lasers has led to continuous-wave (CW) room-temperature …

Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers
have exhibited room-temperature threshold current densities as low as 50 A/cm 2, one of the …

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-
infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas …

An overview of the three competing mid-infrared semiconductor laser approaches, being
diode, quantum cascade and interband cascade laser designs, is given. Limiting factors as …

We report on GaSb-based 2. X μ m diode lasers with an improved waveguide design,
leading to a reduced beam divergence in the fast axis of 44 full width at half maximum …

Tunable lasers emitting in the 2–3 µm wavelength range that are compatible with photonic
integration platforms are of great interest for sensing applications. To this end, combining …

Groups III–V semiconductors have received a great deal of attention because of their
potential advantages for use in optoelectronic and electronic applications. Gallium …