Research interest in the area of transition metal dichalcogenide (TMD) nanostructures has
significantly increased in recent years. This interest is driven by their exceptional properties …

2D layered materials are widely recognized as the revolutionary class of materials, and hold
great promise in the modern device technology industries. The 2D materials family covers …

We report the fabrication, electrical, and optical characterizations of few-layered black
phosphorus (BP)-based field-effect transistor (FET). The fabricated device exhibits a p-type …

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the
transfer characteristics of monolayer molybdenum disulfide (MoS 2) field effect transistors …

This study deals with the electrical transport in back‐gate field‐effect transistors with ultrathin
palladium diselenide (PdSe2) channels. The devices are normally‐on and exhibit dominant …

The metal-graphene contact resistance is one of the major limiting factors toward the
technological exploitation of graphene in electronic devices and sensors. High contact …

Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal
contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated …

Monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor
deposition onto SiO2/Si substrates, are exploited to fabricate field‐effect transistors with n …

The industrial revolution resulted in the contamination of natural water resources. Therefore,
it is necessary to save and recover the natural water resources. In this regard, polymer …

Since the first field emission model or the well-known Fowler–Nordheim (FN) law was
formulated about a century ago (in 1928), it remains an active topic to discover different …