[HTML][HTML] CMOS-MEMS vibro-impact devices and applications

CP Tsai, WC Li - Frontiers in Mechanical Engineering, 2022 - frontiersin.org
CMOS-MEMS-based vibro-impact devices that utilize impact-induced nonlinear dynamics
have been shown to yield unique and unprecedented functionalities with on-chip integration …

Three-dimensional integration of complementary metal-oxide-semiconductor-nanoelectromechanical hybrid reconfigurable circuits

WY Choi, YJ Kim - IEEE Electron Device Letters, 2015 - ieeexplore.ieee.org
Complementary-metal-oxide-semiconductor (CMOS) and nanoelectromechanical (NEM)
hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) …

Nonvolatile nanoelectromechanical memory switches for low-power and high-speed field-programmable gate arrays

YJ Kim, WY Choi - IEEE Transactions on Electron Devices, 2014 - ieeexplore.ieee.org
The application of nanoelectromechanical (NEM) memory switches to field-programmable
gate arrays (FPGAs) has been proposed for the first time. NEM memory switches replace …

Design and characterization of a monolithic CMOS-MEMS mutually injection-locked oscillator for differential resonant sensing

P Prache, J Juillard, PM Ferreira, N Barniol… - Sensors and Actuators A …, 2018 - Elsevier
This paper presents a proof of concept of a differential sensor based on the phase-difference
of two injection-locked MEMS resonators, strongly coupled through their actuation voltages …

Dynamic properties of three-terminal tungsten CMOS-NEM relays under nonlinear tapping mode

M Riverola, G Vidal-Alvarez, G Sobreviela… - IEEE Sensors …, 2016 - ieeexplore.ieee.org
In this paper, we present the electrical characterization of the nonlinear tapping mode of the
nanorelays capacitively transduced. Such a characterization is carried out utilizing three …

[HTML][HTML] Encapsulation of NEM memory switches for monolithic-three-dimensional (M3D) CMOS–NEM hybrid circuits

HC Jo, WY Choi - Micromachines, 2018 - mdpi.com
Considering the isotropic release process of nanoelectromechanical systems (NEMSs),
defining the active region of NEM memory switches is one of the most challenging process …

A monolithically integrated torsional CMOS-MEMS relay

M Riverola, G Sobreviela, F Torres… - Journal of …, 2016 - iopscience.iop.org
We report experimental demonstrations of a torsional microelectromechanical (MEM) relay
fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry …

Fabrication and characterization of a hammer-shaped CMOS/BEOL-embedded nanoelectromechanical (NEM) relay

M Riverola, A Uranga, F Torres, N Barniol - Microelectronic Engineering, 2018 - Elsevier
This paper presents the results on the design, fabrication and characterization of a cantilever-
type NEM relay featuring a hammer-shaped tip and built in the back end of a conventional …

Active Region Formation of Nanoelectromechanical (NEM) Devices for Complementary-Metal-Oxide-Semiconductor-NEM Co-Integration

TM Cha, HC Jo, HS Kwon… - Journal of Nanoscience …, 2019 - ingentaconnect.com
Considering the isotropic release process for nanoelectromechanical (NEM) devices,
defining the specific sacrificial layer of the inter-metal-dielectric (IMD), ie, the active region …

Non-invasive power gating techniques for bursty computation workloads using micro-electro-mechanical relays

HM Alrudainy - 2017 - theses.ncl.ac.uk
Electrostatically-actuated Micro-Electro-Mechanical/Nano-Electro-Mechanical (MEM/NEM)
relays are promising devices overcoming the energy-efficiency limitations of CMOS …