Spintronic devices are of fundamental interest for their nonvolatility and great potential for
low-power electronics applications. The implementation of those devices usually favors …

We report the first experimental demonstration of electrical spin injection, transport, and
detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is …

Fermi level (FL) pinning at the Ge valence band results in a high Schottky barrier height for
all metal/n-Ge contacts. The origin of this pinning effect has been ascribed to either metal …

In this Letter, we report the electrical spin injection and detection in Ge nanowire transistors
with single-crystalline ferromagnetic Mn5Ge3 as source/drain contacts formed by thermal …

To explore spintronics applications for Ge nanowire heterostructures formed by thermal
annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature …

Spin-optoelectronics is a novel research area at the crossroads between the fundamental
physics of quantum-mechanical spin, optoelectronics, and nanotechnology.[1] Spin-and light …

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy.
Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion …

Spin-optoelectronics is an emerging technology in which novel and advanced functionalities
are enabled by the synergetic integration of magnetic, optical and electronic properties onto …

We compared the temperature dependence of spin lifetime in n-Ge characterized from three-
terminal (3T) and four-terminal (4T) Hanle measurements using single-crystalline Fe/MgO/n …

Spintronic devices, in particular spin field-effect transistors (spinFETs), have been
researched for decades as a promising candidate to replace Si transistors with potentially …