Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
Investigation of the nonlinear optical rectification coefficient in a multilayered spherical quantum dot
In the framework of the effective mass approximation, we have investigated the effects of
hydrostatic pressure, temperature, nonparabolicity of the band, and polaronic mass on …
hydrostatic pressure, temperature, nonparabolicity of the band, and polaronic mass on …
Integration of emission-wavelength-controlled InAs quantum dots for ultrabroadband near-infrared light source
N Ozaki, K Takeuchi, Y Hino, Y Nakatani… - Nanomaterials and …, 2014 - hrcak.srce.hr
Sažetak Near-infrared (NIR) light sources are widely utilized in biological and medical
imaging systems owing to their long penetration depth in living tissues. In a recently …
imaging systems owing to their long penetration depth in living tissues. In a recently …
Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks
Recent experimental measurements, without any theoretical guidance, showed that isotropic
polarization response can be achieved by increasing the number of quantum-dot (QD) …
polarization response can be achieved by increasing the number of quantum-dot (QD) …
Development of a 1550-nm InAs/GaAs quantum dot saturable absorber mirror with a short-period superlattice capping structure towards femtosecond fiber laser …
C Jiang, J Ning, X Li, X Wang, Z Zhang - Nanoscale Research Letters, 2019 - Springer
Abstract Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully
applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm …
applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm …
[HTML][HTML] The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
M Shahzadeh, M Sabaeian - AIP Advances, 2014 - pubs.aip.org
The authors report on the impact of wetting layer thickness and quantum dot size on the
electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with …
electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with …
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations
Atomistic electronic structure calculations are performed to study the coherent inter-dot
couplings of the electronic states in a single InGaAs quantum dot molecule. The …
couplings of the electronic states in a single InGaAs quantum dot molecule. The …
Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots
M Usman - Physical Review B—Condensed Matter and Materials …, 2012 - APS
The demonstration of isotropic polarization response from semiconductor quantum dots
(QDs) is a crucial step towards the design of several optoelectronic technologies. Among …
(QDs) is a crucial step towards the design of several optoelectronic technologies. Among …
[HTML][HTML] Atomistic modeling of InGaN/GaN quantum dots-in-nanowire for graded surface-emitting low-threshold, blue exciton laser
MM Taher, S Al-yousif, NM Ahmed - Results in Physics, 2021 - Elsevier
While the development of the quantum photonics field, including emitter–light coupling using
photonic system, has given a lot of attention, it offers quantum control of light. However, the …
photonic system, has given a lot of attention, it offers quantum control of light. However, the …
In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots
M Usman - Journal of Applied Physics, 2011 - pubs.aip.org
The design of optical devices such as lasers and semiconductor optical amplifiers for
telecommunication applications requires polarization insensitive optical emissions in the …
telecommunication applications requires polarization insensitive optical emissions in the …