GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Electrochemically reducing CO2 to valuable fuels or feedstocks is recognized as a
promising strategy to simultaneously tackle the crises of fossil fuel shortage and carbon …

The Ge-Ge longitudinal optical Raman peak has been measured in strained Ge 1− x Sn x
alloy layers grown on top of relaxed In y Ga 1− y As buffer layers on GaAs substrates by …

GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …

We present a new etch chemistry that enables highly selective dry etching of germanium
over its alloy with tin (Ge1–x Sn x). We address the challenges in synthesis of high-quality …

We investigated the effects of incorporation of 0%–2% tin (Sn) into amorphous germanium
(Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn …

We report the first realization of fully-released and relaxed Ge 1-x Sn x structures on Ge
substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain …

Energy harvesting for Internet of Things applications, comprising sensing, life sciences,
wearables, and communications, requires efficient thermoelectric (TE) materials, ideally …

This paper reports on the growth and characterization of highly compressive strained GeSn
layers on thin strain relaxed Ge virtual substrates on Si wafers. Sn concentration up to …

70 C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of
amorphous Ge | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt …