Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in
hafnia in 2011. Since then, it has been subject of many further publications including the …

In this chapter, we will present a digest of the main materials science aspects of the
controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal …

Photoluminescence spectroscopy and atom probe tomography were used to explore the
optical activity and microstructure of Er 3+-doped Si-rich SiO 2 thin films fabricated by radio …

Novel solution-processed amorphous high-k dielectrics for thin film transistors (TFTs) have
been systemically studied with the objective of achieving high performance and reducing …

SiO X/SiO 2 multilayers have been prepared using magnetron sputtering and annealed in
order to induce the growth of Si nanoparticles in Si-rich sublayers. This sample has …

In this study, we report on the evolution of the microstructure and photoluminescence
properties of Pr 3+-doped hafnium silicate thin films as a function of annealing temperature …

The effect of deposition conditions and further annealing treatment on microstructure and
optical properties of (Si, Er)-codoped HfO 2 thin films is investigated. The films are grown on …

Structural, chemical, and luminescence properties of Pr 3+-doped HfSiO x layers fabricated
by radio-frequency magnetron sputtering were examined as a function of annealing …

The effect of thermal annealing on optical properties of Al 2 O 3 films with the different Si
contents was investigated using the photoluminescence and Raman scattering methods. Si …

This paper represents the analysis of the shape of photoluminescence spectra of Si-based
nano-materials vs. energy of excitation light and temperature of measurements as a tool for …