Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

In 1991, Iijima reported on the formation of carbon nanotubes (1) using a simple arc
discharge reaction that led to an arrangement of the material in some micrometer long tubes …

This paper presents a SPICE model for memristive devices. It builds on existing models and
is correlated against several published device characterization data with an average error of …

Abstract The finite-time Mittag-Leffler stability for fractional-order quaternion-valued
memristive neural networks (FQMNNs) with impulsive effect is studied here. A new …

In this paper, a new type of neural networks, quaternion-valued memristive neural networks
(QVMNNs) is formulated. On the basis of the differential inclusion principle and the …

This paper studies one type of delayed memristor-based fractional-order neural networks
(MFNNs) on the finite-time stability problem. By using the method of iteration, contracting …

This paper formulates a class of complex-valued memristive neural networks as well as
investigates the problem of anti-synchronization for complex-valued memristive neural …

Titanium dioxide (TiO2) is one of the most widely used materials in resistive switching
applications, including random-access memory, neuromorphic computing, biohybrid …

Methods of synthesis of nanotubular structures based on titania of various phase and
chemical compositions are described. A systematic account is given of known data about the …

Resistive-switching-based memory devices meet most of the requirements for use in next-
generation information and communication technology applications, including standalone …