Far ultraviolet instrument technology
LJ Paxton, RK Schaefer, Y Zhang… - Journal of Geophysical …, 2017 - Wiley Online Library
The far ultraviolet (FUV) spectral range (from about 115 nm to 180 nm) is one of the most
useful spectral regions for characterizing the upper atmosphere (thermosphere and …
useful spectral regions for characterizing the upper atmosphere (thermosphere and …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
2023 astrophotonics roadmap: pathways to realizing multi-functional integrated astrophotonic instruments
N Jovanovic, P Gatkine, N Anugu… - Journal of Physics …, 2023 - iopscience.iop.org
Photonic technologies offer numerous functionalities that can be used to realize
astrophotonic instruments. The most spectacular example to date is the ESO Gravity …
astrophotonic instruments. The most spectacular example to date is the ESO Gravity …
Enlightening gallium nitride-based UV photodetectors
N Aggarwal, G Gupta - Journal of Materials Chemistry C, 2020 - pubs.rsc.org
This article highlights the emerging demand for gallium nitride (GaN) semiconductor
technology that offers superior optoelectronic properties making it suitable for highly efficient …
technology that offers superior optoelectronic properties making it suitable for highly efficient …
UV superconducting nanowire single-photon detectors with high efficiency, low noise, and 4 K operating temperature
For photon-counting applications at ultraviolet wavelengths, there are currently no detectors
that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark …
that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark …
III-nitride deep UV LED without electron blocking layer
AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL)
to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p …
to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p …
High-efficiency UV/optical/NIR detectors for large aperture telescopes and UV explorer missions: development of and field observations with delta-doped arrays
Exciting concepts are under development for flagship, probe class, explorer class, and
suborbital class NASA missions in the ultraviolet/optical spectral range. These missions will …
suborbital class NASA missions in the ultraviolet/optical spectral range. These missions will …
Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic
integration with other optical components of the photonic circuits because of the planar …
integration with other optical components of the photonic circuits because of the planar …
High-performance solar-blind Al0. 6Ga0. 4N/Al0. 5Ga0. 5N MSM type photodetector
A Yoshikawa, S Ushida, K Nagase, M Iwaya… - Applied Physics …, 2017 - pubs.aip.org
An Al 0.6 Ga 0.4 N/Al 0.5 Ga 0.5 N metal–semiconductor–metal (MSM) deep-ultraviolet
(DUV) photodetector was developed. It possesses both high photosensitivity and high …
(DUV) photodetector was developed. It possesses both high photosensitivity and high …
Dramatic Enhancement of Optoelectronic Properties of Electrophoretically Deposited C60–Graphene Hybrids
Fullerene (C60) and multilayer graphene hybrid devices were fabricated using
electrophoretic deposition, where the C60 clusters are electrically charged upon the …
electrophoretic deposition, where the C60 clusters are electrically charged upon the …