Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

The quest to use nonpolar surfaces of nitride materials and devices started a few years ago
with the aim to avoid the strong internal electric fields in active regions of optoelec‐tronic …

Advances in nanofabrication, characterization tools, and the drive to commercialize
nanotechnology products have contributed to the significant increase in research on …

Surface polarity plays a significant role in chemical etching of GaN in KOH solution, a
process that is important for quality control and device fabrication. In this work, basic …

Selective‐area epitaxy is used to form three‐dimensional (3D) GaN structures providing
semipolar crystal facets. On full 2‐in. sapphire wafers we demonstrate the realization of …

Photoluminescence spectra of nonpolar M-plane ZnO/Zn 0.8 Mg 0.2 O quantum wells exhibit
strong excitonic peaks from low (10 K) to high (325 K) temperatures. We find that the total …

We report on the growth of planar semipolar (10 1 1) GaN on (11 2 3) prepatterned sapphire.
This is a method that allows the growth of semipolar oriented (10 1 1) GaN on large scale …

The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport
in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and …

The interfaces between dielectrics and semiconductors play a dominant role in the
performance of both electronic and optoelectronic devices. In this article, we report the band …

Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-
Active-Region Design “IFGARD”) for the elimination of the quantum-confined Stark effect in …