[HTML][HTML] Epitaxial graphene on SiC: a review of growth and characterization

GR Yazdi, T Iakimov, R Yakimova - Crystals, 2016 - mdpi.com
This review is devoted to one of the most promising two-dimensional (2D) materials,
graphene. Graphene can be prepared by different methods and the one discussed here is …

[HTML][HTML] Emerging SiC applications beyond power electronic devices

F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck… - Micromachines, 2023 - mdpi.com
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been
proposed in different papers. In this review, several of these emerging applications have …

[HTML][HTML] 2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface

G Sfuncia, G Nicotra, F Giannazzo, B Pécz… - …, 2023 - pubs.rsc.org
Beyond the predictions routinely achievable by first-principles calculations and using metal–
organic chemical vapor deposition (MOCVD), we report a GaN monolayer in a buckled …

Spatially resolved mapping of electrical conductivity across individual domain (grain) boundaries in graphene

KW Clark, XG Zhang, IV Vlassiouk, G He… - ACS …, 2013 - ACS Publications
All large-scale graphene films contain extended topological defects dividing graphene into
domains or grains. Here, we spatially map electronic transport near specific domain and …

[HTML][HTML] Vertical transistors based on 2D materials: Status and prospects

F Giannazzo, G Greco, F Roccaforte, SS Sonde - Crystals, 2018 - mdpi.com
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …

Graphene quantum Hall effect parallel resistance arrays

AR Panna, IF Hu, M Kruskopf, DK Patel, DG Jarrett… - Physical Review B, 2021 - APS
As first recognized in 2010, epitaxial graphene on SiC (0001) provides a platform for
quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures …

[HTML][HTML] Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

F Giannazzo, SE Panasci, E Schilirò, A Koos… - Materials Science in …, 2024 - Elsevier
Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …

Atomic structure of epitaxial graphene sidewall nanoribbons: flat graphene, miniribbons, and the confinement gap

I Palacio, A Celis, MN Nair, A Gloter, A Zobelli… - Nano …, 2015 - ACS Publications
Graphene nanoribbons grown on sidewall facets of SiC have demonstrated exceptional
quantized ballistic transport up to 15 μm at room temperature. Angular-resolved …

[HTML][HTML] Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures

F Giannazzo, E Schilirò, G Greco, F Roccaforte - Nanomaterials, 2020 - mdpi.com
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future
electronic and optoelectronic applications. However, their electronic properties are strongly …

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

Y Yang, G Cheng, P Mende, IG Calizo, RM Feenstra… - Carbon, 2017 - Elsevier
Quantized magnetotransport is observed in 5.6× 5.6 mm 2 epitaxial graphene devices,
grown using highly constrained sublimation on the Si-face of SiC (0001) at high temperature …