In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have …
Beyond the predictions routinely achievable by first-principles calculations and using metal– organic chemical vapor deposition (MOCVD), we report a GaN monolayer in a buckled …
All large-scale graphene films contain extended topological defects dividing graphene into domains or grains. Here, we spatially map electronic transport near specific domain and …
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …
As first recognized in 2010, epitaxial graphene on SiC (0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures …
Although silicon carbide (SiC) is widely regarded as the material of choice for power electronics, the development of several new applications on the SiC material platform is …
Graphene nanoribbons grown on sidewall facets of SiC have demonstrated exceptional quantized ballistic transport up to 15 μm at room temperature. Angular-resolved …
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly …
Y Yang, G Cheng, P Mende, IG Calizo, RM Feenstra… - Carbon, 2017 - Elsevier
Quantized magnetotransport is observed in 5.6× 5.6 mm 2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC (0001) at high temperature …