During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …

The III–V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have,
for some time now, been recognized as promising materials for novel electronic and …

We present a comprehensive study of the transport dynamics of electrons in the ternary
compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using …

Using first-principles calculation within density functional theory (DFT), we study the gas
(CO, NH 3, H 2 S, NO 2, NO, SO 2) adsorption properties on the surface of single-layer …

Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …

The effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
MBE is studied. Using an AlN buffer layer can significantly improve the structural and …

We report on the low-field electron mobility in bulk wurtzite InN at room temperature and
over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) …

By using first-principles calculations, we have studied the electronic and optical
characteristics of group III-nitrides, such as BN, AlN, GaN, and InN monolayers. The …

This work presents nonlocal pseudopotential calculations based on realistic, effective atomic
potentials of the wurtzite phase of GaN, InN, and AlN. A formulation formulation for the model …

We report on the study of plasma edge absorption of InN epilayers with free electron
concentration ranging from 3.5× 10 17 to 5× 10 19 cm− 3⁠. Together with the previously …