Influence of proton irradiation on the magnetic properties of two-dimensional Ni (II) molecular magnet
D Czernia, P Konieczny, E Juszyńska-Gałązka… - Scientific Reports, 2023 - nature.com
The influence of 1.9 MeV proton irradiation on structural and magnetic properties has been
explored in the two-dimensional (2D) NiSO4 (1, 3-phenylenediamine) 2 coordination …
explored in the two-dimensional (2D) NiSO4 (1, 3-phenylenediamine) 2 coordination …
A study of the structural and surface morphology and photoluminescence of ni-doped aln thin films grown by co-sputtering
Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal
structure with a large band gap of 6.2 eV. AlN thin films have several potential applications …
structure with a large band gap of 6.2 eV. AlN thin films have several potential applications …
Response of structural and optical properties against proton irradiation in AlN: Tm thin films
Thulium (Tm) doped aluminum nitride (AlN) thin films are deposited by radio frequency (RF)
magnetron sputtering in a pure nitrogen atmosphere. As-deposited thin films are irradiated …
magnetron sputtering in a pure nitrogen atmosphere. As-deposited thin films are irradiated …
Irradiation effects on Nd and W doped Aluminum Nitride thin films
Abstract Neodymium (Nd) and Tungsten (W) doped Aluminum Nitride (AlN) thin films
deposited on Si (110) substrates are fabricated by reactive magnetron sputtering technique …
deposited on Si (110) substrates are fabricated by reactive magnetron sputtering technique …
Structural, electrical and optical characterizations of yttrium doped aluminum nitride thin films before and after ions irradiation
Yttrium (Y) doped aluminum nitride (AlN) thin films are prepared using reactive magnetron
sputtering method in a nitrogen atmosphere at room temperature. Thermal annealing at a …
sputtering method in a nitrogen atmosphere at room temperature. Thermal annealing at a …
Semiconductor Characteristic and Ferromagnetism in Rare Earth (Eu, Er)-Doped AlGaN Alloy: LSDA+ U Approach
S Belhachi - Brazilian Journal of Physics, 2023 - Springer
Structural, electronic, and magnetic properties of rare earth (Eu, Er)-doped AlGaN are
investigated in wurtzite structure, based on spin-polarized density functional theory with the …
investigated in wurtzite structure, based on spin-polarized density functional theory with the …
Fabrication and Ions Irradiation Study of AlN: Gd Thin Films
Abstract Thin films of Aluminum Nitride (AlN) doped with Gadolinium (Gd) are deposited on
Si (111) substrates, in pure Nitrogen (N) atmosphere using reactive magnetron sputtering …
Si (111) substrates, in pure Nitrogen (N) atmosphere using reactive magnetron sputtering …
Ion Beam Effect on the Structural and Optical Properties of AlN: Er
Erbium (Er)-doped Aluminum Nitride (AlN) thin films were deposited and fabricated on Si
(100) and Si (111) substrates in a Nitrogen atmosphere using the plasma magnetron …
(100) and Si (111) substrates in a Nitrogen atmosphere using the plasma magnetron …
Effect of Proton Irradiation on Magnetic Properties of Two-Dimensional Ni (Ii) Molecular Magnet
D Czernia, P Konieczny, E Juszyńska-Gałązka… - Available at SSRN … - papers.ssrn.com
The influence of 1.9 MeV proton irradiation on structural and magnetic properties has been
explored in the two-dimensional (2D) NiSO4 (1, 3-phenylenediamine) 2 coordination …
explored in the two-dimensional (2D) NiSO4 (1, 3-phenylenediamine) 2 coordination …
Structural and optical properties of Cr doped AlN thin films before and after ions implantation
Abstract Thin films of Chromium (Cr) doped Aluminum Nitride (AlN) have been prepared by
radio frequency magnetron sputtering technique at room temperature and pressure …
radio frequency magnetron sputtering technique at room temperature and pressure …