Within the framework of effective-mass approximation, using a variational method, the
combined effect of the hydrostatic pressure and high-frequency laser field on the binding …

The influence of thermal ionization of an impurity delta-doped layer situated either in the
center or on the edge of a quantum well (QW) on impurity binding energy is investigated …

Self-consistent calculation of Schrodinger, Poisson and electroneutrality equation with
embedded impurity binding energy calculations of delta-doped SiGe/Si quantum well …

We have studied and computed variationally the impurity energy, impurity energy turning
points, and ground state normalized binding energy as functions of the impurity position for …

The influence of shallow background donor impurities on the energy characteristics of the
SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The …

Bu çalışmada, düşük boyutlu yarıiletken sistemlerin temel özellikleri hakkında genel bilgiler
verilerek kuantum kuyusunda bağlı enerji düzeyleri basınç altında hesaplanmıştır …

به کمکِ تقریبِ دی الکتریکِ پیوسته، مدهای فونون‌های اپتیکی حاصل از فصلِ مشترکِ یک سیمِ
کوانتومی استوانه‌ای از جنس GaAs در یک محیطِ نیمه رسانای قطبی GaxAl1-xAs بررسی شده است …‎

Linear, third-order nonlinear and total optical absorption coefficients associated with intra-
conduction band in wurtzite unstrained (In, Ga) N-GaN coupled quantum wells are …