Impact of scaling on neutron-induced soft error in SRAMs from a 250 nm to a 22 nm design rule
E Ibe, H Taniguchi, Y Yahagi… - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
Trends in terrestrial neutron-induced soft-error in SRAMs from a 250 nm to a 22 nm process
are reviewed and predicted using the Monte-Carlo simulator CORIMS, which is validated to …
are reviewed and predicted using the Monte-Carlo simulator CORIMS, which is validated to …
Radiation effects in a post-Moore world
DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …
effects on microelectronics, focusing on historical trends and future needs. A number of …
[图书][B] Single event effects in aerospace
E Petersen - 2011 - books.google.com
This book introduces the basic concepts necessary to understand Single Event phenomena
which could cause random performance errors and catastrophic failures to electronics …
which could cause random performance errors and catastrophic failures to electronics …
Scaling trends of digital single-event effects: A survey of SEU and SET parameters and comparison with transistor performance
D Kobayashi - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
The history of integrated circuit (IC) development is another record of human challenges
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …
Monte Carlo simulation of single event effects
In this paper, we describe a Monte Carlo approach for estimating the frequency and
character of single event effects based on a combination of physical modeling of discrete …
character of single event effects based on a combination of physical modeling of discrete …
Radiation hardness assurance testing of microelectronic devices and integrated circuits: Radiation environments, physical mechanisms, and foundations for hardness …
JR Schwank, MR Shaneyfelt… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This document describes the radiation environments, physical mechanisms, and test
philosophies that underpin radiation hardness assurance test methodologies. The natural …
philosophies that underpin radiation hardness assurance test methodologies. The natural …
Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation
This paper investigates the impact of terrestrial radiation on soft error (SE) sensitivity along
the very large-scale integration (VLSI) roadmap of bulk, FDSOI and finFET nano-scale …
the very large-scale integration (VLSI) roadmap of bulk, FDSOI and finFET nano-scale …
Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM
DF Heidel, PW Marshall, JA Pellish… - … on Nuclear Science, 2009 - ieeexplore.ieee.org
Experimental results are presented on single-bit-upsets (SBU) and multiple-bit-upsets
(MBU) on a 45 nm SOI SRAM. The accelerated testing results show the SBU-per-bit cross …
(MBU) on a 45 nm SOI SRAM. The accelerated testing results show the SBU-per-bit cross …
Radiation effects in new materials for nano-devices
Exposure to radiation poses significant challenges for electronic devices, including
parametric degradation, loss of data, or catastrophic failure. The challenges and solutions …
parametric degradation, loss of data, or catastrophic failure. The challenges and solutions …
Muon-induced single event upsets in deep-submicron technology
BD Sierawski, MH Mendenhall… - … on Nuclear Science, 2010 - ieeexplore.ieee.org
Experimental data are presented that show low-energy muons are able to cause single
event upsets in 65 nm, 45 nm, and 40 nm CMOS SRAMs. Energy deposition measurements …
event upsets in 65 nm, 45 nm, and 40 nm CMOS SRAMs. Energy deposition measurements …