Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Reconfigurable neuromorphic computing: Materials, devices, and integration
Neuromorphic computing has been attracting ever‐increasing attention due to superior
energy efficiency, with great promise to promote the next wave of artificial general …
energy efficiency, with great promise to promote the next wave of artificial general …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications
Ferroelectric materials are considered ideal for emerging memory devices owing to their
characteristic remanent polarization, which can be switched by applying a sufficient electric …
characteristic remanent polarization, which can be switched by applying a sufficient electric …
Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy
P Hao, S Zheng, B Zeng, T Yu, Z Yang… - Advanced Functional …, 2023 - Wiley Online Library
The next‐generation semiconductor memories are essentially required for the
advancements in modern electronic devices. Ferroelectric memories by HfO2‐based …
advancements in modern electronic devices. Ferroelectric memories by HfO2‐based …
Recent research for HZO-based ferroelectric memory towards in-memory computing applications
The AI and IoT era requires software and hardware capable of efficiently processing
massive amounts data quickly and at a low cost. However, there are bottlenecks in existing …
massive amounts data quickly and at a low cost. However, there are bottlenecks in existing …
Ferroelectric 2D SnS2 Analog Synaptic FET
In this study, the development and characterization of 2D ferroelectric field‐effect transistor
(2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D …
(2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D …
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their
exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization …
exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization …
A perspective on the physical scaling down of hafnia-based ferroelectrics
HfO 2-based ferroelectric thin films have attracted significant interest for semiconductor
device applications due to their compatibility with complementary metal oxide …
device applications due to their compatibility with complementary metal oxide …
Emerging fluorite-structured antiferroelectrics and their semiconductor applications
The ferroelectric properties of fluorite-structured oxides have attracted significant attention
from researchers because of their potential applications in nonvolatile memory devices …
from researchers because of their potential applications in nonvolatile memory devices …