Semiconductor nanowires are widely considered as the building blocks that revolutionized
many areas of nanosciences and nanotechnologies. The unique features in nanowires …

Wearable and implantable bioelectronics have experienced remarkable progress over the
last decades. Bioelectronic devices provide seamless integration between electronics and …

Large-scale synthesis of GaN nanowires was grown on c-sapphire substrate by chemical
vapor deposition technique. X-ray diffraction, field emission scanning electron microscopy, μ …

GaN nanostructures were synthesized via a simple chemical vapor deposition using Ga 2 O
3 and NH 3 as precursors. Structural and morphological properties were systematically …

Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor
deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The …

Aligned gallium nitride (GaN) nanowires were catalytically synthesized in a plasma-
enhanced hot filament chemical vapor deposition system, in which GaN powder and …

Wide direct band gap gallium nitride (GaN) semiconductor has received significant attention
as an ideal material for various applications in the optoelectronic devices. One major use of …

The study of Raman scattering of GaN nanowires under different growth temperatures (750°
C to 1000° C) is presented. GaN nanowires grown at 950° C possessed the highest …

Wide bandgap (WBG) semiconductors are known for their excellent electrical and
mechanical properties, biocompatibility, and biodegradability, being promising candidates in …

We report the role of a double stage heat treatment process for the synthesis of novel GaN
nanostructures (NSs) using a two stage furnace following a catalyst free vapour–solid …