Comprehensive investigation and comparative analysis of machine learning-based small-signal modelling techniques for GaN HEMTs
A number of machine learning (ML) algorithm based small signal modeling of Gallium
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression
Abstract Machine learning‐based efficient temperature‐dependent small‐signal modelling
approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors …
approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors …
Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors
This paper explores and develops efficient temperature‐dependent small‐signal modeling
approaches for GaN high electron mobility transistors (HEMTs). The multilayer perceptron …
approaches for GaN high electron mobility transistors (HEMTs). The multilayer perceptron …
[PDF][PDF] Gonçalves
FA Ferreira - Moderna saúde pública, 1990 - core.ac.uk
Ultimamente, as redes de telecomunicações móveis estão a exigir cada vez maiores taxas
de transferência de informação. Com este aumento, embora sejam usados códigos …
de transferência de informação. Com este aumento, embora sejam usados códigos …
Over-the-air noise figure characterization of mm-wave active integrated antennas using a reverberation chamber
T Stek, A Hubrechsen, DS Prinsloo… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Active integrated antennas (AIAs) are used in low-noise receivers for their good noise
performance compared with their nonintegrated counterparts. However, it is challenging to …
performance compared with their nonintegrated counterparts. However, it is challenging to …
Demonstration of CAD deployability for GPR based small-signal modelling of GaN HEMT
This paper develops and presents a CAD deployability of small-signal model of Gallium
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …
Power amplifier for magnetic resonance imaging using unconventional Cartesian feedback loop
A Abuelhaija, K Solbach, A Buck - 2015 German Microwave …, 2015 - ieeexplore.ieee.org
In MRI systems, RF fields are affected by the presence of the human body in the scanner
causing mismatch between the RF coil and the feed cable. A power amplifier incorporating …
causing mismatch between the RF coil and the feed cable. A power amplifier incorporating …
Electromagnetics theory-based new equation to improve harmonically tuned power amplifier theory and design
Power amplifiers (PA) are used to boost the power of signals. Recently, harmonically tuned
power amplifiers (HTPA) offer high efficiency and wider bandwidth than conventional PA …
power amplifiers (HTPA) offer high efficiency and wider bandwidth than conventional PA …
A Fast Two‐Tone Active Load‐Pull Algorithm for Assessing the Non‐linearity of RF Devices
J Su, J Cai, X Zheng, L Sun - Chinese Journal of Electronics, 2022 - Wiley Online Library
Radio frequency (RF) devices used in modern wireless systems must meet increasingly
complicated spectral constraints while still operating with high power efficiency. A fast real …
complicated spectral constraints while still operating with high power efficiency. A fast real …
Gaussian process regression for small-signal modelling of GaN HEMTs
This paper explores and develops a biasdependent small-signal model for Gallium Nitride
(GaN) High Electron Mobility Transistors (HEMTs) using a non-parametric probability based …
(GaN) High Electron Mobility Transistors (HEMTs) using a non-parametric probability based …