Although the interstitial hydrogen atom would seem to be one of the simplest defect centres
in any lattice, its solid state chemistry is in fact unknown in many materials, not least amongst …

We have determined locations for the donor and acceptor levels of muonium in six
semiconductor materials (Si, Ge, GaAs, GaP, ZnSe, and 6H-SiC) as a test of defect-level …

We report Muonium (Mu) donor and acceptor levels in Czochralski-grown Silicon
Germanium alloys (Cz-Si 1− x Ge x). Measurement of these defect energies provides an …

Muon spin rotation and resonance studies of Czochralski-grown silicon germanium alloys
with high Ge content have determined muonium (Mu) donor and acceptor energy levels …

We discuss charge-state and site-change transitions of muonium (Mu) in bulk Czochralski-
grown Si1− xGex alloys studied via longitudinal field muon spin relaxation (LF-μSR). A …

Over the past few decades, considerable progress has been achieved in the theoretical
predictions of a wide range of properties of defects in semiconductors. In addition to …

We report preliminary results of our most recent LF-μSR investigations of Mu site-and charge-
state transitions in the Czochralski-grown Si0. 09Ge0. 91 alloy. The experiments reported …

We have observed muon spin rotation (μSR) features that are consistent with a shallow
muonium (Mu) acceptor state for several Ge-rich silicon germanium alloy compositions. The …

The behaviour of monatomic hydrogen defect centres is modelled using implanted positive
muons in both allotropes of elemental tin. A new search for paramagnetic muonium is made …

In this study, we use longitudinal field muon spin relaxation (LF-µSR) technique to observe
charge-state and site-change transitions of muonium in Si1-xGex samples (x= 0.45, 0.77 …