Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance …
H Mertens, R Ritzenthaler, H Arimura… - 2015 Symposium on …, 2015 - ieeexplore.ieee.org
We demonstrate Si-cap-free SiGe p-channel FinFETs and gate-all-around (GAA) FETs in a
replacement metal gate (RMG) process, for Ge contents of 25% and 45%. We show that the …
replacement metal gate (RMG) process, for Ge contents of 25% and 45%. We show that the …
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications
R Khosla, D Schwarz, HS Funk, K Guguieva… - Solid-State …, 2021 - Elsevier
Here, we report comprehensive investigations of aluminum oxide (Al 2 O 3) high-κ gate
oxides deposited via remote plasma enhanced atomic layer deposition (Re-PEALD) with …
oxides deposited via remote plasma enhanced atomic layer deposition (Re-PEALD) with …
Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀. ₇₈Ge₀. ₂₂ Structures by Trimethylaluminum Treatment
We report improvement of TiN/Y 2 O 3/Si 0.78 Ge 0.22 metal-oxide-semiconductor (MOS)
interface properties by employing the trimethylaluminum (TMA) pretreatment before Y 2 O 3 …
interface properties by employing the trimethylaluminum (TMA) pretreatment before Y 2 O 3 …
Interface engineering for atomic layer deposited alumina gate dielectric on SiGe substrates
Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging
topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides …
topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides …
Nitride passivation of the interface between high-k dielectrics and SiGe
K Sardashti, KT Hu, K Tang, S Madisetti… - Applied Physics …, 2016 - pubs.aip.org
In-situ direct ammonia (NH 3) plasma nitridation has been used to passivate the Al 2 O
3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the …
3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the …
Heterogeneous CMOS photonics based on SiGe/Ge and III–V semiconductors integrated on Si platform
The heterogeneous integration of SiGe, Ge, and III-V semiconductors on Si provides many
opportunities to develop high-performance photonic integrated circuits through …
opportunities to develop high-performance photonic integrated circuits through …
Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0. 62Ge0. 38 gate stacks with high temperature post-metallization annealing
We investigate the influence of an interfacial layer (IL) formed by plasma pre-oxidation on
atomic layer deposition TiN/Y 2 O 3/Si 0.62 Ge 0.38 metal–oxide–semiconductor (MOS) gate …
atomic layer deposition TiN/Y 2 O 3/Si 0.62 Ge 0.38 metal–oxide–semiconductor (MOS) gate …
Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods
Q Yao, X Ma, H Wang, Y Wang, G Wang, J Zhang… - Nanomaterials, 2021 - mdpi.com
The interface passivation of the HfO2/Si0. 7Ge0. 3 stack is systematically investigated based
on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0 …
on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0 …
Experimental study of the ultrathin oxides on SiGe alloy formed by low-temperature ozone oxidation
Abstract The ultrathin oxides (< 1.2 nm) on SiGe are formed by directly oxidizing SiGe
surface in 10% O 3/O 2 mixture in Beneq TFS 200 ALD system. The oxide compositions are …
surface in 10% O 3/O 2 mixture in Beneq TFS 200 ALD system. The oxide compositions are …
Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method
The interface trap density (D it) of SiGe metal-oxide-semiconductor (MOS) interfaces is
analyzed by the conductance method to evaluate the effect of electron cyclotron resonance …
analyzed by the conductance method to evaluate the effect of electron cyclotron resonance …