Recent progress of electrically pumped AlGaN diode lasers in the UV-B and-C bands
The development of electrically pumped semiconductor diode lasers emitting at the
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy
TD Moustakas - MRS Communications, 2016 - cambridge.org
This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …
Optical and structural properties of AlN ceramics irradiated with heavy ions
A Kozlovskiy, I Kenzhina, ZA Alyamova, M Zdorovets - Optical Materials, 2019 - Elsevier
The paper presents the results of studying the effect of irradiation with 85 MeV Fe 7+ ions on
the optical and structural properties of nitride ceramics at an irradiation temperature of 300 …
the optical and structural properties of nitride ceramics at an irradiation temperature of 300 …
Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates
The performance characteristics of optically pumped laser heterostructures emitting in the
UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures …
UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures …
Deep-UV nitride-on-silicon microdisk lasers
Deep ultra-violet semiconductor lasers have numerous applications for optical storage and
biochemistry. Many strategies based on nitride heterostructures and adapted substrates …
biochemistry. Many strategies based on nitride heterostructures and adapted substrates …
[HTML][HTML] An AlGaN tunnel junction light emitting diode operating at 255 nm
We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV)
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
[HTML][HTML] Electron overflow of AlGaN deep ultraviolet light emitting diodes
We have studied the design, epitaxy, and performance characteristics of deep ultraviolet
(UV) AlGaN light emitting diodes (LEDs). By combining the tunnel junction and polarization …
(UV) AlGaN light emitting diodes (LEDs). By combining the tunnel junction and polarization …
Band gap bowing and optical polarization switching in Al Ga N alloys
We present a detailed theoretical study of the band gap bowing of wurtzite AlGaN alloys
over the full composition range. Our theoretical framework is based on an atomistic tight …
over the full composition range. Our theoretical framework is based on an atomistic tight …
[HTML][HTML] MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates
Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide
bandgap Al (Ga) N alloys with drastically lower extended defect densities. Here, we report …
bandgap Al (Ga) N alloys with drastically lower extended defect densities. Here, we report …
Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga,
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …