A review on the design of ternary logic circuits

XY Wang, CT Dong, ZR Wu, ZQ Cheng - Chinese Physics B, 2021 - iopscience.iop.org
A multi-valued logic system is a promising alternative to traditional binary logic because it
can reduce the complexity, power consumption, and area of circuit implementation. This …

Design and application of memristive balanced ternary univariate logic circuit

X Wang, X Zhang, C Dong, SK Nath, HHC Iu - Micromachines, 2023 - mdpi.com
This paper proposes a unique memristor-based design scheme for a balanced ternary
digital logic circuit. First, a design method of a single-variable logic function circuit is …

Design of low area and low power systolic serial parallel multiplier using CNTFETS

KBD Kumar, LBP Reddy, V Pudi… - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
In this paper, we designed a CNTFET based Systolic serial parallel multiplier. This systolic
serial parallel multiplier is 100% efficient and operates on selection of either 0, X, 2X, 3X …

Effect of chiral vector on voltage transfer characteristics of CNTFET inverter

A Paul, B Pradhan - 2020 International Conference on …, 2020 - ieeexplore.ieee.org
Chiral Vector of carbon nanotube (CNT) is a very important parameter. Change in chiral
vector changes the diameter of CNT directly which in turn has effect on threshold voltage of …

Impact of Parametric Variation on the Characteristics and Performance of CNTFET Inverter

A Paul, B Pradhan - IETE Journal of Research, 2024 - Taylor & Francis
In this paper, a simple carbon nanotube field effect transistor (CNTFET)-based inverter has
been simulated and the impacts of changing various design and process parameters on its …

Design, analysis and comparison between CNTFET based ternary SRAM cell and PCRAM cell

S Shreya, S Sourav - 2015 Communication, Control and …, 2015 - ieeexplore.ieee.org
This paper presents variation and comparison between emerging memory devices ie,
ternary SRAM cell and PCRAM cell. In nano range devices, Carbon nanotubes field effect …

Improving the VI characteristics of Al2O3 based CNTFET and comparing with SiO2 based CNTFET by varying source/drain length

B Kumar, B Yakkala, V Thiruchelvam… - AIP Conference …, 2024 - pubs.aip.org
This research work aims to improve the VI characteristics of a CNTFET (Carbon Nanotube
Field Effect Transistor) having Al2O3 (Aluminium oxide) and compare SiO2 (Silicon dioxide) …

Exploring the prospect of FinFET and CNTFET in implementation of a two-stage operational amplifier

SS Mehjabin, AA Akib - 2020 11th International Conference on …, 2020 - ieeexplore.ieee.org
This paper presents a performance analysis of two-stage operational amplifier using
conventional MOSFET technology, FinFET technology and carbon nanotube technology in …

Impact of temperature variation and oxide thickness variation on the performance of CNTFET based inverter in nanometer regime

AR Aswatha - 2015 International Conference on Emerging …, 2015 - ieeexplore.ieee.org
In this paper the performance analysis of CNTFET inverter under the variation of
temperature and oxide thickness presented. The influence of variation of parameters on the …

Investigating PDP-based error by testing NAND and D-Latch based on CNTFET (Stanford model)

S Shahrabadi - SN Applied Sciences, 2019 - Springer
This paper uses Stanford model for MOS-like CNTFET in order to find optimum values of its
parameters. The purpose is to test well-designed NAND and D-Latch ICs based on this …