The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

Recent progress in two‐dimensional ferroelectric materials

Z Guan, H Hu, X Shen, P Xiang… - Advanced Electronic …, 2020 - Wiley Online Library
The investigation of two‐dimensional (2D) ferroelectrics has attracted significant interest in
recent years for applications in functional electronics. Without the limitation of a finite size …

Thin-film ferroelectric materials and their applications

LW Martin, AM Rappe - Nature Reviews Materials, 2016 - nature.com
Ferroelectric materials, because of their robust spontaneous electrical polarization, are
widely used in various applications. Recent advances in modelling, synthesis and …

Flexoelectronics of centrosymmetric semiconductors

L Wang, S Liu, X Feng, C Zhang, L Zhu, J Zhai… - Nature …, 2020 - nature.com
Interface engineering by local polarization using piezoelectric,,–, pyroelectric, and
ferroelectric,–effects has attracted considerable attention as a promising approach for …

Towards oxide electronics: a roadmap

M Coll, J Fontcuberta, M Althammer, M Bibes… - Applied surface …, 2019 - orbit.dtu.dk
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Ferroelectric tunnel junctions: modulations on the potential barrier

Z Wen, D Wu - Advanced materials, 2020 - Wiley Online Library
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

Bandgap tuning of multiferroic oxide solar cells

R Nechache, C Harnagea, S Li, L Cardenas… - Nature …, 2015 - nature.com
Multiferroic films are increasingly being studied for applications in solar energy conversion
because of their efficient ferroelectric polarization-driven carrier separation and above …

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing

D Wang, P Wang, S Mondal, M Hu, Y Wu… - Advanced …, 2023 - Wiley Online Library
Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …

Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology

S Dong, JM Liu, SW Cheong, Z Ren - Advances in Physics, 2015 - Taylor & Francis
Multiferroics are those materials with more than one ferroic order, and magnetoelectricity
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …

[HTML][HTML] A highly CMOS compatible hafnia-based ferroelectric diode

Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang… - Nature …, 2020 - nature.com
Memory devices with high speed and high density are highly desired to address the
'memory wall'issue. Here we demonstrated a highly scalable, three-dimensional stackable …