US PATENT DOCUMENTS 6,642,573 B1 11/2003 Halliyal et al. 6,645,882 B1 11/2003
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …

Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …

3,357,961 A 12/1967 Makowski et al. 3,381,114. A 4, 1968 Nakanuma 4,058.430 A 11, 1977
Suntola et al. 4,215,156 A 7, 1980 Dalal et al. 4,302.620 A 11, 1981 Chu 4.333, 808 A …

US7369435B2 - Write once read only memory employing floating gates - Google Patents
US7369435B2 - Write once read only memory employing floating gates - Google Patents Write …

Structures, systems and methods for transistors utilizing oxide-nitride nanolaminates are
provided. One transistor embodiment includes a first source? drain region, a second …

Atomic layer deposited lanthanum-metal oxide dielectric lay ers and methods of fabricating
such dielectric layers provide an insulating layer in a variety of structures for use in a wide …

440 elements such as Zirconium are thermodynamically stable such that the gate oxides
formed Will have minimal reactions With a silicon substrate or other structures during any …

5,304,622 A 4, 1994 Ikai et al....................... 528/16 6,020,024 A 2/2000 Maiti et al. 6,020,243
A 2/2000 Wallace et al. 6,060,755 A 5, 2000 Ma et al. 6,075,691 A 6/2000 Duenas et al …

Electronic apparatus and methods of forming the electronic apparatus include a conductive
layer having a layer of ruthe nium in contact With a lanthanide oxide dielectric layer for use …

Structures, systems and methods for floating gate transistors utilizing oxide-conductor
nanolaminates are provided. One floating gate transistor embodiment includes a first …