Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications
P Anusuya, P Kumar - Multiscale and Multidisciplinary Modeling …, 2024 - Springer
This article mainly focuses on the impact on interface trap charges (ITCs) on dual gate
source-drain Schottky barrier tunnel field effect transistor (DGSD-STFET) using a high-k …
source-drain Schottky barrier tunnel field effect transistor (DGSD-STFET) using a high-k …
Analysis of the DC and RF performance of the Double-Gate-Source-Drain Schottky Barrier Tunnel Field Effect Transistor (DGSD-STFET) for high frequency …
P Anusuya, V Shalini, P Kumar - 2023 3rd International …, 2023 - ieeexplore.ieee.org
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
[PDF][PDF] 1 School of Advanced Sciences, VIT-Chennai University, Tamil Nadu 600127, India, Email: anusuya. p2020@ vitstudent. ac. in 2 School of Electronics VIT …
P Anusuya, V Shalini, P Kumar - researchgate.net
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …