Two-dimensional materials for next-generation computing technologies

C Liu, H Chen, S Wang, Q Liu, YG Jiang… - Nature …, 2020 - nature.com
Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

Strain engineering of two‐dimensional materials: Methods, properties, and applications

S Yang, Y Chen, C Jiang - InfoMat, 2021 - Wiley Online Library
Abstract Two‐dimensional (2D) materials have attracted extensive research interests due to
their excellent properties related to unique structure. Strain engineering, as an important …

Improving carrier mobility in two-dimensional semiconductors with rippled materials

HK Ng, D Xiang, A Suwardi, G Hu, K Yang, Y Zhao… - Nature …, 2022 - nature.com
Abstract Two-dimensional (2D) semiconductors could potentially replace silicon in future
electronic devices. However, the low carrier mobility in 2D semiconductors at room …

Ultrasensitive detection of nucleic acids using deformed graphene channel field effect biosensors

MT Hwang, M Heiranian, Y Kim, S You, J Leem… - Nature …, 2020 - nature.com
Abstract Field-effect transistor (FET)-based biosensors allow label-free detection of
biomolecules by measuring their intrinsic charges. The detection limit of these sensors is …

Flexible electronics based on 2D transition metal dichalcogenides

D Jiang, Z Liu, Z Xiao, Z Qian, Y Sun, Z Zeng… - Journal of Materials …, 2022 - pubs.rsc.org
Flexible devices play an important role in various fields such as electronics, industry,
healthcare, military, space exploration, and so on. Traditional materials used for flexible …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

Mobility Enhancement of Strained MoS2 Transistor on Flat Substrate

Y Chen, D Lu, L Kong, Q Tao, L Ma, L Liu, Z Lu, Z Li… - ACS …, 2023 - ACS Publications
Strain engineering has been proposed as a promising method to boost the carrier mobility of
two-dimensional (2D) semiconductors. However, state-of-the-art straining approaches are …

[HTML][HTML] MA2Z4 family heterostructures: Promises and prospects

CC Tho, SD Guo, SJ Liang, WL Ong, CS Lau… - Applied Physics …, 2023 - pubs.aip.org
Recent experimental synthesis of ambient-stable MoSi 2 N 4 monolayer has garnered
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

M Wu, Y Xiao, Y Zeng, Y Zhou, X Zeng, L Zhang… - InfoMat, 2021 - Wiley Online Library
Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D)
transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to …

Emerging opportunities for 2D semiconductor/ferroelectric transistor‐structure devices

ZD Luo, MM Yang, Y Liu, M Alexe - Advanced Materials, 2021 - Wiley Online Library
Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …