The basis of a new technology allowing the bonding of GaAs layers on various substrates is
described. The method consists in the use of a two-step thermal profile during hydrogen …

The results of the basic study on depth distribution of hydrogen atoms and corresponding
damage profiles produced by 40 keV hydrogen ion implantation in (100) GaAs are reported …

The enhanced hydrogen absorption and sensitivity of nanocrystalline Pd (60 at.%)∕ Au (40
at.%) thin films were realized through the development of a thermal annealing process and a …

The effects of hydrogen treatment on electrical properties of detector-grade cadmium
manganese telluride (CdMnTe: In) crystals were investigated. The results showed that the …

In order to investigate the passivation effects of hydrogen, high-resistivity indium doped
cadmium manganese telluride (CMT: In) single crystals were annealed in H 2 atmosphere …

Four groups of He+ and H+ with different dose combinations are implanted into GaAs
crystal. After annealing, different phenomena of blisters and exfoliation appear on the …

In the present work, the effective atomic number () and electron density () of some common
ion implantation materials namely GaAs, Si3N4, SiO2 and Glass systems (Boro-Silicate, Pb …

We have investigated the influence of substrate temperature during implantation, T
implant⁠, on blister formation in GaAs: N layers produced by N ion implantation followed by …

摘要(中) 在半導體產業中, SOI 的發展解決了傳統矽材的問題, 提昇了固態元件的效率和降低
能量損耗, 而通常是利用智切法來製作SOI 材料. 在智切法的步驟中, 我們將離子佈植的步驟 …

Large band gap semiconductors will find more and more applications in such important
fields as power electronics, high temperature electronics or optoelectronics where traditional …