A -Band 48-Gbit/s 64-QAM/QPSK Direct-Conversion I/Q Transceiver Chipset
S Carpenter, D Nopchinda, M Abbasi… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
This paper presents design and characterization of single-chip 110-170-GHz (D-band) direct
conversion in-phase/quadrature-phase (I/Q) transmitter (TX) and receiver (RX) monolithic …
conversion in-phase/quadrature-phase (I/Q) transmitter (TX) and receiver (RX) monolithic …
A 120 GHz fully integrated 10 Gb/s short-range star-QAM wireless transmitter with on-chip bondwire antenna in 45 nm low power CMOS
N Deferm, P Reynaert - IEEE Journal of Solid-State Circuits, 2014 - ieeexplore.ieee.org
In this paper, a fully integrated D-band transmitter with on-chip dipole bondwire antenna
implemented in 45 nm low-power CMOS is presented. The purpose of this 120 GHz wireless …
implemented in 45 nm low-power CMOS is presented. The purpose of this 120 GHz wireless …
A 120GHz 10Gb/s phase-modulating transmitter in 65nm LP CMOS
N Deferm, P Reynaert - 2011 IEEE International Solid-State …, 2011 - ieeexplore.ieee.org
This paper presents a 120GHz fully integrated 65nm low power (LP) CMOS transmitter that
achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth …
achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth …
A W-band power amplifier in 65-nm CMOS with 27GHz bandwidth and 14.8 dBm saturated output power
KJ Tsai, JL Kuo, H Wang - 2012 IEEE Radio Frequency …, 2012 - ieeexplore.ieee.org
A W-band power amplifier in 65-nm CMOS technology is presented in this paper. This PA is
a 3-stage common source design using thin film microstrip lines to realize the matching …
a 3-stage common source design using thin film microstrip lines to realize the matching …
A Integrated CMOS Frequency Synthesizer for -Band Satellite Communications
Z Xu, QJ Gu, YC Wu, HY Jian… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
A 70-78-GHz integrated frequency synthesizer is implemented in 65-nm CMOS. It has been
integrated in a two-step zero-IF millimeter-wave transceiver for emerging applications, such …
integrated in a two-step zero-IF millimeter-wave transceiver for emerging applications, such …
Wideband millimeter-wave active and passive mixers in 28 nm bulk CMOS technology
A compact 129-140 GHz Gilbert-cell mixer for up-conversion and 127-140 GHz image-
rejection (IR) resistive mixer for down-conversion are realized for a 140-GHz transceiver in …
rejection (IR) resistive mixer for down-conversion are realized for a 140-GHz transceiver in …
A 100–117 GHz W-band CMOS power amplifier with on-chip adaptive biasing
A W-band power amplifier (PA) has been realized in 65 nm bulk CMOS technology, which
covers 100 to 117 GHz. It delivers up to 13.8 dBm saturated output power with up to 15 dB …
covers 100 to 117 GHz. It delivers up to 13.8 dBm saturated output power with up to 15 dB …
Fully integrated D-band direct carrier quadrature (I/Q) modulator and demodulator circuits in InP DHBT technology
S Carpenter, M Abbasi, H Zirath - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents design and characterization of D-band (110-170 GHz) monolithic
microwave integrated quadrature up-and down-converting mixer circuits with on-chip RF …
microwave integrated quadrature up-and down-converting mixer circuits with on-chip RF …
Front-End Development for Radar Applications: A Focus on 24 GHz Transmitter Design
The proliferation of radar technology has given rise to a growing demand for advanced, high-
performance transmitter front-ends operating in the 24 GHz frequency band. This paper …
performance transmitter front-ends operating in the 24 GHz frequency band. This paper …
An mm-wave CMOS I–Q subharmonic resistive mixer for wideband zero-IF receivers
In this letter, we propose a novel wideband subharmonically pumped fully differential IQ
resistive mixer architecture, which eliminates the necessity for on-chip dc-blocking …
resistive mixer architecture, which eliminates the necessity for on-chip dc-blocking …