Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD
For the growth of low-defect crack-free GaN heterostructures on large-area silicon
substrates, compositional grading of AlGaN is a widely adapted buffer technique to restrict …
substrates, compositional grading of AlGaN is a widely adapted buffer technique to restrict …
Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si (111)
PV Seredin, AS Lenshin, AM Mizerov, H Leiste… - Applied Surface …, 2019 - Elsevier
Structural, optical and morphological properties of hybrid heterostructures on the basis of
GaN grown on compliant substrate por-Si(111) - ScienceDirect Skip to main contentSkip to …
GaN grown on compliant substrate por-Si(111) - ScienceDirect Skip to main contentSkip to …
Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3
SV Ivanov, DV Nechaev, AA Sitnikova… - Semiconductor …, 2014 - iopscience.iop.org
This paper reports on novel approaches developed for plasma-assisted molecular beam
epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which …
epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which …
Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy
R Aidam, E Diwo, N Rollbuehler, L Kirste… - Journal of Applied …, 2012 - pubs.aip.org
This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN-
based high electron mobility transistor structures grown on 4 in. Si (111) substrates. In situ …
based high electron mobility transistor structures grown on 4 in. Si (111) substrates. In situ …
Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS
In recent years, the remarkable properties and potential applications of III-nitride (III-N)
semiconductors have sparked a significant interest in the field of microelectromechanical …
semiconductors have sparked a significant interest in the field of microelectromechanical …
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
A transmission electron microscopy (TEM) study was carried out on a series of AlGaN/GaN
high-electron mobility transistor (HEMT) structures grown by plasma assisted molecular …
high-electron mobility transistor (HEMT) structures grown by plasma assisted molecular …
AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy
WE Hoke, TD Kennedy, JJ Mosca, AJ Kerr… - Journal of Vacuum …, 2011 - pubs.aip.org
GaN high electron mobility transistor (HEMT) structures have been grown by plasma
molecular beam epitaxy on 100 mm diameter⟨ 111⟩ silicon substrates. Crack-free films with …
molecular beam epitaxy on 100 mm diameter⟨ 111⟩ silicon substrates. Crack-free films with …
Recent progresses in GaN power rectifier
D Alquier, F Cayrel, O Menard, AE Bazin… - Japanese Journal of …, 2012 - iopscience.iop.org
In this work, both" Schottky to Schottky" structure (STS) and pseudo-vertical Schottky barrier
diode (pv-SBD) have been processed on GaN heteroepitaxially grown on sapphire or silicon …
diode (pv-SBD) have been processed on GaN heteroepitaxially grown on sapphire or silicon …
Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si (111) on buffer growth conditions by MBE
P Mukhopadhyay, S Chowdhury, A Wowchak… - Journal of Vacuum …, 2013 - pubs.aip.org
Multiple AlGaN/GaN heterostructure has been grown on Si (111) substrate by molecular
beam epitaxy with different buffer growth conditions. Its influence on physical and electrical …
beam epitaxy with different buffer growth conditions. Its influence on physical and electrical …
Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films
In this work, we study the influence of 3C–SiC/Si (111) template parameters (thickness,
roughness and substrate miscut) on the GaN crystal quality and its strain state. For this …
roughness and substrate miscut) on the GaN crystal quality and its strain state. For this …