The realisation of photonic devices for different energy ranges demands materials with
different bandgaps, sometimes even within the same device. The optimal solution in terms of …

Over the past decades, the progress in the growth of materials which can be applied to
cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting …

We report MBE synthesis of InAs/vanadium hybrid nanowires. The vanadium was deposited
without breaking ultra-high vacuum after InAs nanowire growth, minimizing any effect of …

Freestanding semiconductor nanowires have opened up possibilities for semiconductor
devices, enabling geometries, material combinations, and strain states, which were not …

Among the experimental realization of fault-tolerant topological circuits are interconnecting
nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks …

Core–shell structural engineering is a common strategy for tuning upconversion
luminescence in lanthanide-doped nanoparticles. However, epitaxial growth on hexagonal …

Nanowires have emerged as a promising platform for the development of novel and high-
quality heterostructures at large lattice misfit, inaccessible in a thin film configuration …

The growth of regular arrays of uniform III–V semiconductor nanowires is a crucial step on
the route toward their application-relevant large-scale integration onto the Si platform. To …

Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications.
While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum …

As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility,
excellent ambient stability and topological states. Here, we realize the controllable synthesis …