Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …

An overview over issues and findings in SiC power MOSFET reliability is given. The focus of
this article is on threshold instabilities and the differences to Si power MOSFETs …

The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC)
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …

An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for
modern power electronics systems due to large economic implications. SiC mosfet modules …

Abstract Relatively recently, SiC power MOSFETs have transitioned from being a research
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …

Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to
estimate the device temperature in operation, typically assuming a constant thermal …

Failure mechanisms during short-circuit conditions of Silicon Carbide Power MOSFETs are
analysed in this work, and a possible theoretical explanation is provided. Insight into the …

This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The
model describes the static and dynamic behavior and accounts for leakage current and …