The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a
breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been …

This paper presents the design, fabrication and characterization results obtained on the last
generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the …

Numerical simulations on the optimization of junction termination extension (JTE) have been
performed. Various termination techniques have been applied and simulated in this paper …

In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater
than 10 kV when its theoretical value is around 13 kV. The device design was extracted from …

In this paper we present a new test bench called micro-OBIC used to characterized wide
band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current …

Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target
Page 1 HAL Id: hal-04276812 https://hal.science/hal-04276812 Submitted on 9 Nov 2023 HAL is …

SiC devices become more and more prominent in the power semiconductor industry.
Thanks to a technology that seems to be mature enough, SiC devices are becoming more …

Phương pháp dòng quang điện cảm ứng (OBIC) là một phương pháp dựa trên việc đo dòng
điện kích thích sinh ra do một chùm tia laser với bước sóng thích hợp chiếu trên bề mặt của …

In this study, a new robust double-ring junction-termination-extension (DR-JTE) for high-
voltage pn-diodes is presented and analyzed using numerical simulations. As figured out …

La thèse intitulée" Conception, caractérisation et optimisation d'un transistor à effet de
champ haute tension en Carbure de Silicium (SiC) et de leur diode associée", s' est …