State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
Observation of Rich Defect Dynamics in Monolayer MoS2
Defects play a pivotal role in limiting the performance and reliability of nanoscale devices.
Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) …
Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) …
Deep neural network analysis models for complex random telegraph signals
Time-fluctuating signals are ubiquitous and diverse in many physical, chemical, and
biological systems, among which random telegraph signals (RTSs) refer to a series of …
biological systems, among which random telegraph signals (RTSs) refer to a series of …
Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors
Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
Ultra-low noise defect probing instrument for defect spectroscopy of MOS transistors
M Waltl - IEEE Transactions on Device and Materials Reliability, 2020 - ieeexplore.ieee.org
It is commonly accepted that the performance and time-to-failure of modern semiconductor
transistors are seriously affected by single defects located in the insulator or at the insulator …
transistors are seriously affected by single defects located in the insulator or at the insulator …
Random telegraph noise of a 28-nm cryogenic MOSFET in the coulomb blockade regime
HB Yang, M Robitaille, X Chen… - IEEE Electron …, 2021 - ieeexplore.ieee.org
We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial
bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) …
bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) …
[HTML][HTML] Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
In nMOS transistors the impact of positive bias temperature instability (PBTI) on the device
performance is typically considered negligible and has thus been barely studied in the past …
performance is typically considered negligible and has thus been barely studied in the past …
Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy
Random telegraph noise (RTN) is often considered a nuisance or, more critically, a key
reliability challenge for miniaturized semiconductor devices. However, this picture is …
reliability challenge for miniaturized semiconductor devices. However, this picture is …
Reliability of miniaturized transistors from the perspective of single-defects
M Waltl - Micromachines, 2020 - mdpi.com
To analyze the reliability of semiconductor transistors, changes in the performance of the
devices during operation are evaluated. A prominent effect altering the device behavior are …
devices during operation are evaluated. A prominent effect altering the device behavior are …