The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
C Lamberti - Surface Science Reports, 2004 - Elsevier
In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …
on semiconductor heterostructures have been required to obtain increasingly strict and well …
Strain and relaxation in InAs and InGaAs films grown on GaAs (001)
JC Woicik, KE Miyano, JG Pellegrino, PS Shaw… - Applied physics …, 1996 - pubs.aip.org
The strain and relaxation of InAs and InGaAs films grown on GaAs (001) have been
examined by the x‐ray standing wave and extended x‐ray absorption fine‐structure …
examined by the x‐ray standing wave and extended x‐ray absorption fine‐structure …
RE plasma deposition of amorphous silicon-germanium alloys: evidence for a chemisorption-based growth process
G Bruno, P Capezzuto, G Cicala… - IEEE transactions on …, 1990 - ieeexplore.ieee.org
Amorphous silicon-germanium alloys (a-Si/sub 1-x/Ge/sub x/: H, F) have been deposited by
glow-discharge decomposition of silicon tetrafluoride (SiF/sub 4/) and germane (GeH/sub 4/) …
glow-discharge decomposition of silicon tetrafluoride (SiF/sub 4/) and germane (GeH/sub 4/) …
[图书][B] A study of the performance of tight-binding models for silicon and silicon-germanium alloys
AK Roberts - 1998 - search.proquest.com
An important challenge in achieving small-scale semiconductor devices is to confine
dopants to small, well-defined regions because device performance depends on their …
dopants to small, well-defined regions because device performance depends on their …