High blocking temperature spin orbit torque electrode
An apparatus is provided which comprises: a magnetic junction having a magnet with a first
magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect …
magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect …
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
An apparatus is provided which comprises: a magnetic junction including: a first structure
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …
Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
2018-07-17 Assigned to INTEL CORPORATION reassignment INTEL CORPORATION
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Spin orbit memory with multiferroic material
A low power, energy efficient, nonvolatile, high-speed memory apparatus is provided that
can function at extremely low temperatures (eg, less than 30 degree Kelvin). The apparatus …
can function at extremely low temperatures (eg, less than 30 degree Kelvin). The apparatus …
Apparatus and method for boosting signal in magnetoelectric spin orbit logic
An apparatus is provided to improve spin injection effi ciency from a magnet to a spin orbit
coupling material. The apparatus comprises: a first magnet; a second magnet adja cent to …
coupling material. The apparatus comprises: a first magnet; a second magnet adja cent to …