Valley-dependent topological phase transition and quantum anomalous valley Hall effect in single-layer RuClBr

H Sun, SS Li, W Ji, CW Zhang - Physical Review B, 2022 - APS
Quantum anomalous valley Hall effect (QAVHE), which combines both the features of QAHE
and AVHE, is both fundamentally intriguing and practically appealing, but is experimentally …

Two-dimensional intrinsic ferrovalley with large valley polarization

HX Cheng, J Zhou, W Ji, YN Zhang, YP Feng - Physical Review B, 2021 - APS
Manipulation of the valley degree of freedom provides a novel paradigm in quantum
information technology. In this work, through first principles calculations, we demonstrate …

Valley-related multiple Hall effect in monolayer

X Feng, X Xu, Z He, R Peng, Y Dai, B Huang, Y Ma - Physical Review B, 2021 - APS
Two-dimensional materials with valley-related multiple Hall effect are both fundamentally
intriguing and practically appealing for exploring novel phenomena and applications, but …

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

R Li, J Jiang, W Mi, H Bai - Nanoscale, 2021 - pubs.rsc.org
The valley degrees of freedom of Bloch electrons provide a proper platform to realize
information storage and processing. Using first principles calculations, we propose that the …

Spontaneous valley polarization and valley-nonequilibrium quantum anomalous Hall effect in Janus monolayer ScBrI

K Jia, XJ Dong, SS Li, WX Ji, CW Zhang - Nanoscale, 2023 - pubs.rsc.org
Topology and ferrovalley (FV) are two essential concepts in emerging device applications
and the fundamental research field. To date, relevant reports are extremely rare about the …

Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer

SD Guo, L Zhang, Y Zhang, P Li, G Wang - Physical Review B, 2024 - APS
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any
net magnetic moment and are robust to external magnetic perturbation with ultrahigh …

Realizing spontaneous valley polarization and topological phase transitions in monolayer ScX2 (X= Cl, Br, I)

Y Wu, J Tong, L Deng, F Luo, F Tian, G Qin, X Zhang - Acta Materialia, 2023 - Elsevier
Manipulating the valley degree of freedom besides the charge and spin has attracted
increasing interest in fundamental sciences and emerging applications. In this study, the …

Possible electronic state quasi-half-valley metal in a monolayer

SD Guo, YL Tao, HT Guo, ZY Zhao, B Wang, G Wang… - Physical Review B, 2023 - APS
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley
semiconductors and half-valley metals (HVM) have been proposed, which possess intrinsic …

Distinct ferrovalley characteristics of the Janus RuClX (X= F, Br) monolayer

Y Ma, Y Wu, J Tong, L Deng, X Yin, L Zhou, X Han… - Nanoscale, 2023 - pubs.rsc.org
Two-dimensional ferrovalley materials should simultaneously possess three characteristics,
that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic …

Strain-engineering induced topological phase transitions and multiple valley states in Janus monolayer VCSiN 4

K Jia, XJ Dong, SS Li, WX Ji, CW Zhang - Journal of Materials …, 2023 - pubs.rsc.org
It is crucial to manipulate the valley degree of freedom for the valleytronics and spintronics
development, which offers fascinating opportunities in both practical applications and …