Armor for Steel: Facile Synthesis of Hexagonal Boron Nitride Films on Various Substrates

I Vlassiouk, S Smirnov, A Puretzky… - Advanced Materials …, 2024 - Wiley Online Library
While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation
layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier …

Continuous orientated growth of scaled single-crystal 2D monolayer films

Z Han, L Li, F Jiao, G Yu, Z Wei, D Geng, W Hu - Nanoscale Advances, 2021 - pubs.rsc.org
Single-crystal 2D materials have attracted a boom of scientific and technological activities.
Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high …

Atomic sawtooth-like metal films for vdW-layered single-crystal growth

H Ko, SH Choi, Y Park, S Lee, CS Oh, SY Kim… - Nature …, 2024 - nature.com
Atomic sawtooth surfaces have emerged as a versatile platform for growth of single-crystal
van der Waals layered materials. However, the mechanism governing the formation of single …

Surface engineering of substrates for chemical vapor deposition growth of graphene and applications in electronic and spintronic devices

X Xue, L Wang, G Yu - Chemistry of Materials, 2021 - ACS Publications
Controllable synthesis of large-scale and high-quality graphene film is a basis for
development of electronic and spintronic devices. Chemical vapor deposition (CVD) has …

Enhanced Growth of Homogeneous Multilayer Graphene on Ni (111) via Airflow Microcavity-Assisted PECVD

F Jiang, M Pan, J Peng, YG Hu, P Li… - Crystal Growth & …, 2024 - ACS Publications
Due to the perfect spin filtering at the lattice-matched multilayer graphene/Ni (111) interface,
the lattice-matched multilayer graphene/Ni (111) interface has been attracting wide interest …

Thickness-Controlled Growth of Multilayer Graphene on Ni (111) Using an Approximate Equilibrium Segregation Method for Applications in Spintronic Devices

W Qiu, Y Guo, Q Zhang, J Hu, J Peng… - ACS Applied Nano …, 2023 - ACS Publications
Thickness-controlled multilayer graphene has been attracting wide interest in electronic and
spintronic devices due to its tunable electronic structure and spin transport properties. In …

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

R Wu, Y Hu, P Li, J Peng, J Hu, M Yang, D Chen… - Nanomaterials, 2021 - mdpi.com
The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-
matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve …

Formation of Large-Area Twisted Bilayer Graphene on Ni (111) Film via Ambient Pressure Chemical Vapor Deposition

W Qiu, Y Guo, R Wu, P Li, J Hu, J Peng… - ACS Applied …, 2023 - ACS Publications
Due to the destruction of the intrinsic symmetry between the layers, twisted bilayer graphene
has the advantages of available interlayer coupling, tunable electronic bandgap, and …

Influence of twin-crystal structures on the temperature dependence of magneto-optic Kerr effect and magnetic anisotropy in epitaxial Ni thin films

N Mondal, A Barman, S Chatterjee… - Journal of Magnetism and …, 2022 - Elsevier
We report on the enhanced Curie temperature and magnetic anisotropy observed in the
temperature dependence of magneto-optic Kerr effect (MOKE) in epitaxial Ni films grown on …

Direct precipitation of multilayer graphene on c-plane sapphire using a crystallized Ni catalyst

A Nakashima, T Murahashi, R Achiwa, T Kashio… - Journal of Crystal …, 2022 - Elsevier
Graphene was precipitated using crystallized Ni catalyst, which was crystallized using a
MBE-grown Ni layer as a seed. In the thermal crystallization process, the additional …