Semiconductors provide some of the most promising materials for nonlinear optics, because
of large resonant nonlinearities, control of recombination time (from milliseconds to …

The authors studied the effects of changing the barrier design of GaAs-Al/sub x/Ga/sub 1-
x/As quantum wells on the electroabsorption, exciton saturation, and carrier sweep-out …

A direct optical measurement of electron drift mobility in multiple quantum well
semiconductors is achieved by creating electron spin gratings in time-resolved degenerate …

Temperature and electron density dependent measurements of the electron spin relaxation
in bulk GaAs are performed using time-and polarization-resolved photoluminescence …

A review is given of the present status of the non-linear optical materials and devices, and
their applications for optical signal processing and computing. The primary motivation …

We have measured the picosecond-time-resolved in-plane motion of carriers in a multiple
quantum well by a spatially scanned pump-probe technique at bath temperatures between …

Dark excitons are of fundamental importance in a broad range of contexts but are difficult to
study using conventional optical spectroscopy due to their weak interaction with light. We …

One‐dimensional diffusion of excitons in GaAs quantum wires was observed by using
microphotoluminescence measurements at low temperature. The observed diffusion length …

The last decade has shown that nonlinear optical effects can be used to switch and route
optical signals or perform logic operations on them in a number of ways. This has led to …

Time-and wavelength-resolved circular dichroism of the excitonic saturation in GaAs-Al x Ga
1− x As multiple quantum wells at room temperature is investigated using a degenerate …