Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Semiconductor quantum dots (QD) have been extensively applied in optical and
optoelectronic devices because of their strong quantum confinement and bandgap …

We develop the device models for the far-infrared interband photodetectors (IPs) with the
graphene-layer (GL) sensitive elements and the black Phosphorus (bP) or black-Arsenic (b …

We have investigated optical properties and device performance of sub-monolayer quantum
dots infrared photodetector with confinement enhancing (CE) barrier and compared with …

The characteristics of quantum well infrared photodetectors (QWIPs) which utilizing
electromagnetically induced transparency (EIT) have been presented in this communication …

We demonstrate room temperature operation of In 0.5 Ga 0.5 Sb/InAs type-II quantum well
photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At …

We have investigated the growth of self-assembled InAs quantum dots using bismuth as a
surfactant to control the dot size and density. We find that the bismuth surfactant increases …

A study of intersubband transitions in quantum well infrared detectors working at high
temperatures has been reported. This study allows a greater tunability in the device designs …

We report on the effect of confinement barriers on the performance of InAs/InGaAs sub-
monolayer quantum dot infrared photodetectors. Two samples with different AlxGa_1-xAs …

Inter-band optical transitions in InAs submonolayer and Stranski-Krastanov quantum dot
(QD) in quantum well (QW) nanostructures are studied by means of room temperature …