This paper investigates how an applied magnetic field, the quantum size, and spin
polarization effect an asymmetric heterostructure composed of InAs, GaAs, and GaSb …

Electronic transmission and spin polarization have been computed as a function of the
incident electron energy for heterostructures like InAs/GaSb/InGaAs triple barriers. This was …

In this paper, we theoretically study the effects of doping concentration ND and an external
electric field on the intersubband transitions in In x Al (1− x) N/In y Ga (1− y) N single …

In this paper, we theoretically study the quantum size effects on the electronic transmission
and current density of the electrons in GaAs/AlGaAs resonant tunneling diodes by solving …

We theoretically investigate the effects of quantum size and doping concentration on the
current-voltage characteristics of GaN resonant tunneling diodes. The results show a …

This paper theoretically examines the spin-dependent transport of electrons through
InAs/GaAs symmetric triple barriers by solving the spin-dependent Schrödinger equation …

The spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on
the depletion layer. In this study the stiffness of Ga 1− x Mn x As spin injector in terms of …

Spin dependent tunneling through a nanometer thick square barrier based on zinc-blende
structure material has a great deal of attention due to its potential application in spintronics …

In this work, an analytical expression is presented of electron transmittance through a
potential barrier by applying a bias voltage with spin polarization consideration. A zinc …

Bu tez çalışmasında manyetik yapılı yarıiletken kristallerde özdirencin dış magnit alana bağlı
davranışı incelenmştir. Özel olarak, antiferromagnit kristaller ele alınmış ve dış magnit alanın …