Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds

Y Shi - Accounts of Chemical Research, 2015 - ACS Publications
Conspectus Hot wire chemical vapor deposition (HWCVD), also referred to as catalytic CVD
(Cat-CVD), has been used to produce Si-containing thin films, nanomaterials, and functional …

Thermal decomposition mechanism of tetraethylsilane by flash pyrolysis vacuum ultraviolet photoionization mass spectrometry and DFT calculations: the competition …

K Shao, X Liu, J Zhang - The Journal of Physical Chemistry A, 2023 - ACS Publications
Thermal decomposition of tetraethylsilane was investigated at temperatures up to 1330 K
using flash pyrolysis vacuum ultraviolet photoionization mass spectrometry. Density …

Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma

AU Haq, P Lucke, J Benedikt… - Plasma Processes …, 2020 - Wiley Online Library
We report on mass spectrometry of residual gases after dissociation of tetramethylsilane
(TMS) during the synthesis of silicon carbide (SiC) nanocrystals (NCs) by an atmospheric …

Ion chemistry and ionic thin film deposition from HMDS‐photochemistry induced by VUV‐radiation from an atmospheric plasma

T Winzer, J Benedikt - Plasma Processes and Polymers, 2024 - Wiley Online Library
Injection of precursor molecules into a plasma often results in particle generation or
deposition in the source, compromising film quality and plasma operation. We present here …

Mechanism of the thermal decomposition of tetramethylsilane: a flash pyrolysis vacuum ultraviolet photoionization time-of-flight mass spectrometry and density …

X Liu, J Zhang, A Vazquez, D Wang, S Li - … Chemistry Chemical Physics, 2018 - pubs.rsc.org
The thermal decomposition of tetramethylsilane (TMS) was studied over the temperature
range of 298–1450 K by combining flash pyrolysis vacuum ultraviolet photoionization time-of …

Unraveling the complex chemistry using dimethylsilane as a precursor gas in hot wire chemical vapor deposition

R Toukabri, Y Shi - Physical Chemistry Chemical Physics, 2014 - pubs.rsc.org
The gas-phase reaction chemistry when using dimethylsilane (DMS) as a source gas in a
hot-wire chemical vapor deposition (CVD) process has been studied in this work. The …

Competition of silene/silylene chemistry with free radical chain reactions using 1-methylsilacyclobutane in the hot-wire chemical vapor deposition process

I Badran, TD Forster, R Roesler… - The Journal of Physical …, 2012 - ACS Publications
The gas-phase reaction chemistry of using 1-methylsilacyclobutane (MSCB) in the hot-wire
chemical vapor deposition (CVD) process has been investigated by studying the …

Decomposition of 1, 1‐dimethyl‐1‐silacyclobutane on a tungsten filament—evidence of both ring C C and ring Si C bond cleavages

L Tong, YJ Shi - Journal of mass spectrometry, 2010 - Wiley Online Library
Abstract The decomposition of 1, 1‐dimethyl‐1‐silacyclobutane (DMSCB) on a heated
tungsten filament has been studied using vacuum ultraviolet laser single photon ionization …

Decomposition of hexamethyldisilane on a hot tungsten filament and gas-phase reactions in a hot-wire chemical vapor deposition reactor

Y Shi, X Li, L Tong, R Toukabri… - Physical Chemistry …, 2008 - pubs.rsc.org
To study the effect of an Si–Si bond on gas-phase reaction chemistry in the hot-wire
chemical vapor deposition (HWCVD) process with a single source alkylsilane molecule, soft …

Formation of methyl radicals from decomposition of methyl-substituted silanes over tungsten and tantalum filament surfaces

R Toukabri, N Alkadhi, YJ Shi - The Journal of Physical Chemistry …, 2013 - ACS Publications
The formation of methyl radical from the decomposition of four methyl-substituted silane
molecules, including monomethylsilane (MMS), dimethylsilane (DMS), trimethylsilane …