Hybrid system combining two-dimensional materials and ferroelectrics and its application in photodetection

Y Sun, G Niu, W Ren, X Meng, J Zhao, W Luo, ZG Ye… - ACS …, 2021 - ACS Publications
Photodetectors are one of the most important components for a future “Internet-of-Things”
information society. Compared to the mainstream semiconductor-based photodetectors …

Performance limit of ultrathin GaAs transistors

Q Li, S Fang, S Liu, L Xu, L Xu, C Yang… - … Applied Materials & …, 2022 - ACS Publications
High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …

Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials

SH Kim, SK Kim, JP Shim, DM Geum… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
Monolithic 3-D integration has emerged as a promising technological solution for traditional
transistor scaling limitations and interconnection bottleneck. The challenge we must …

3D stackable synaptic transistor for 3D integrated artificial neural networks

SK Kim, YJ Jeong, P Bidenko, HR Lim… - … applied materials & …, 2020 - ACS Publications
Although they have attracted enormous attention in recent years, software-based and two-
dimensional hardware-based artificial neural networks (ANNs) may consume a great deal of …

Remarkable ferroelectricity-modulated electronic and magnetic properties in a 2H-VS 2/BiAlO 3 (0001) hybrid system

J Yuan, JQ Dai, C Ke - Physical Chemistry Chemical Physics, 2022 - pubs.rsc.org
In the present work, a 2H-VS2/BiAlO3 (0001) hybrid system is constructed to perform first-
principles density functional theory (DFT) calculations. The results reveal that, in addition to …

A Novel Fin-Shape Double-Gate GaAs p-MOSFET with Intrinsic Source and Enhanced Switching Performance

IC Cherik, S Mohammadi - IEEE Transactions on Dielectrics …, 2024 - ieeexplore.ieee.org
This article introduces a novel double-gate (DG) p-channel MOSFET based on gallium
arsenide (GaAs), in which the source region is intrinsic and the holes are induced in this …

Au/Ni/Au as a contact for p-type GaAs

SO Jones, E Bancroft, SP Jarvis… - … Science and Technology, 2024 - iopscience.iop.org
An easy to fabricate ohmic-contact to moderately-doped p-type GaAs has been achieved.
The tri-layer Au/Ni/Au contact is deposited by thermal evaporation, followed by rapid thermal …

Modeling of inversion layer capacitance of III-V double gate MOSFETs using a neural network-based regression technique

SK Maity, S Pandit - Journal of Computational Electronics, 2023 - Springer
This work presents a data-driven regression model of inversion layer capacitance of double
gate III-V channel MOSFETs implemented using an artificial neural network. The training …

[HTML][HTML] Kinetics of HfO2 etching and impurity elimination with atomic hydrogen beams

M Benedicto, P Tejedor - Applied Surface Science, 2021 - Elsevier
Modification of the surface composition, stoichiometry, morphology, and structure of HfO 2
ultra-thin layers upon exposure to atomic hydrogen beams has been investigated by a …

Compact drain current modeling of planar InGaAs quantum well MOSFET

SK Maity, P Dutta, S Pandit - Micro and Nanostructures, 2022 - Elsevier
In this article, we propose a physics-based compact drain current model of planar InGaAs
channel-based quantum well MOS transistor. The effects of essential physical phenomenon …