Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Due to the emergence of electric vehicles, power electronics have become the new focal
point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC …

Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …

As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …

Conductive β-Ga 2 O 3 epilayers grown on the sapphire substrate using metalorganic
chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator …

Monoclinic gallium oxide (β-Ga 2 O 3) has recently attracted increasing attention due to the
availability of high quality, large diameter single crystals from mature melt growth methods …

The van der Waals (vdW) pn junctions are crucial to develop multifunctional and high-
performance electronic and optoelectronic devices. The asymmetric doping effect in wide …

Owing to their excellent optoelectronic and electrical properties, β-Ga2O3/4H-SiC
heterojunctions have been widely employed to build solar-blind photodetectors. When …

Designing high-performance β-Ga2O3/4H-SiC heterojunctions has been widely investigated
in recent years due to their unique applications in photodetectors. Due to the low defect …

The flexible transverse β-Ga 2 O 3 Schottky barrier diode (SBD) was fabricated by
transferring the stripped β-Ga 2 O 3 single crystal film onto muscovite, and its electrical …