Novel applications of pulse laser annealing in micro structures by boundary control
W Tang, Z Chen, S He, HA Zhang - Procedia Chemistry, 2009 - Elsevier
XeCl pulse excimer laser with a wavelength of 248 nm and pulse duration of 38 ns, was
utilized to anneal the silicon carbide material deposited by PECVD around the temperature …
utilized to anneal the silicon carbide material deposited by PECVD around the temperature …