A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
In this work, we report record electron mobility values in unintentionally doped β-Ga 2 O 3
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and
plasma enhanced chemical vapor deposited SiO 2 layers, is used to enhance the …
plasma enhanced chemical vapor deposited SiO 2 layers, is used to enhance the …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …