III-nitride semiconductor lasers grown on Si
M Feng, J Liu, Q Sun, H Yang - Progress in Quantum Electronics, 2021 - Elsevier
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
Quasi van der Waals epitaxy nitride materials and devices on two dimension materials
D Liang, T Wei, J Wang, J Li - Nano Energy, 2020 - Elsevier
In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …
Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum
We demonstrate a wide-bandgap semiconductor photonics platform based on
nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at …
nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at …
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures
D Bayerl, SM Islam, CM Jones, V Protasenko… - Applied Physics …, 2016 - pubs.aip.org
We present the theoretical and experimental results for the electronic and optical properties
of atomically thin (1 and 2 monolayers) GaN quantum wells with AlN barriers. Strong …
of atomically thin (1 and 2 monolayers) GaN quantum wells with AlN barriers. Strong …
Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
[HTML][HTML] Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
Deep ultraviolet (UV) optical emission below 250 nm (∼ 5 eV) in semiconductors is
traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown …
traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown …
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
GaN in different dimensionalities: Properties, synthesis, and applications
Y Chen, J Liu, K Liu, J Si, Y Ding, L Li, T Lv… - Materials Science and …, 2019 - Elsevier
Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …
Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
We demonstrate phase-matched second harmonic generation in gallium nitride on silicon
microdisks. The microdisks are integrated with side-coupling bus waveguides in a two …
microdisks. The microdisks are integrated with side-coupling bus waveguides in a two …